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target specification this is preliminary information on a new product foreseen to be developed. details are subject to change without notice. february 2007 rev 1 1/13 13 stb160n75f3 STP160N75F3 - stw160n75f3 n-channel 75v - 3.5m ? - 120a - to-220 - to-247 - d 2 pa k mdmesh? low voltage power mosfet general features ultra low on-resistance 100% avalanche tested description this n-channel enhancement mode power mosfet is the latest refinement of stmicroelectronics unique ?single feature size??strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproduc ibility. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge . applications switching application internal schematic diagram type v dss r ds(on) i d stb160n75f3 75v 4.2m ? 120a (1) 1. current limited by package STP160N75F3 75v 4.5m ? 120a (1) stw160n75f3 75v 4.5m ? 120a (1) 1 2 3 to-220 to-247 1 3 d2pak www.st.com order codes part number marking package packaging stb160n75f3 160n75f3 d2pak tape & reel STP160N75F3 160n75f3 to-220 tube stw160n75f3 160n75f3 to-247 tube
contents stb160n75f3 - STP160N75F3 - stw160n75f3 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
stb160n75f3 - STP160N75F3 - stw160n75f3 electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 75 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25c 120 a i d (1) drain current (continuous) at t c = 100c 96 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 480 a p tot (3) 3. rated according to rthj-case total dissipation at t c = 25c 315 w derating factor 2.1 w/c dv/dt peak diode recovery voltage slope tbd v/ns e as single pulse avalanche energy tbd mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 0.48 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb160n75f3 - STP160N75F3 - stw160n75f3 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,@125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 60a d2pak 3.5 3.2 4.5 4.2 m ? m ? table 4. dynamic symbol parameter test co nditions min typ max unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 4.5a i d = 10a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 7000 1100 32 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =44v, i d = 60a v gs =10v (see figure 2) 110 tbd tbd tbd nc nc nc
stb160n75f3 - STP160N75F3 - stw160n75f3 electrical characteristics 5/13 table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =35 v, i d = 60a, r g =4.7 ?, v gs =10v, (see figure 4) tbd tbd tbd tbd ns ns ns ns table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse with limited by safe operating area source-drain current source-drain current (pulsed) 120 480 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =120a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120a, di/dt = 100a/s, v dd =30 v, tj=150c (see figure 3) 75 195 5 ns nc a
test circuit stb160n75f3 - STP160N75F3 - stw160n75f3 6/13 3 test circuit figure 1. switching times test circuit for resistive load figure 2. gate charge test circuit figure 3. test circuit for inductive load switching and diode recovery times figure 4. unclamped inductive load test circuit figure 5. unclamped inductive wavefo rm figure 6. switching time waveform
stb160n75f3 - STP160N75F3 - stw160n75f3 package mechanical data 7/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data stb160n75f3 - STP160N75F3 - stw160n75f3 8/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stb160n75f3 - STP160N75F3 - stw160n75f3 package mechanical data 9/13 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
package mechanical data stb160n75f3 - STP160N75F3 - stw160n75f3 10/13 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
stb160n75f3 - STP160N75F3 - stw160n75f3 packaging mechanical data 11/13 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history stb160n75f3 - STP160N75F3 - stw160n75f3 12/13 6 revision history table 7. revision history date revision changes 07-feb-2007 1 first release
stb160n75f3 - STP160N75F3 - stw160n75f3 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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